By Tim David Germann
Semiconductor heterostructures characterize the spine for an expanding number of digital and photonic units, for purposes together with details garage, conversation and fabric remedy, to call yet a couple of. Novel structural and fabric ideas are wanted for you to additional push the functionality limits of current units and to open up new program parts.
This thesis demonstrates how key functionality features of 3 totally different sorts of semiconductor lasers should be adapted utilizing shrewdpermanent nanostructure layout and epitaxial progress concepts. All points of laser fabrication are mentioned, from layout and development of nanostructures utilizing metal-organic vapor-phase epitaxy, to fabrication and characterization of entire devices.
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Semiconductor heterostructures characterize the spine for an expanding number of digital and photonic units, for purposes together with details garage, conversation and fabric remedy, to call yet a couple of. Novel structural and fabric ideas are wanted with a view to extra push the functionality limits of current units and to open up new software parts.
Extra info for Design and Realization of Novel GaAs Based Laser Concepts
1 the first step is a GRI in order to condition reactor and wafer surface properties. As a result the temperature becomes stable and the arsenic saturation of surfaces inside the reactor is set. 5 µm/h, which is rather high when compared to other reported QD growth processes [2, 3]. As 2-D to 3-D transition occurs immediately after reaching the critical layer thickness, QD formation happens in parallel with the QD material deposition. 7 ML I n As is detailed within the dissertation of Frank Heinrichsdorff  and in [5–7].
As 2-D to 3-D transition occurs immediately after reaching the critical layer thickness, QD formation happens in parallel with the QD material deposition. 7 ML I n As is detailed within the dissertation of Frank Heinrichsdorff  and in [5–7]. The process presented results in a short QD deposition time of only a few seconds, aiming at a decoupling of material deposition time and subsequent GRI for QD formation. This optional GRI directly subsequent to the QD material deposition is used as a tuning parameter to produce larger QDs with a red-shifted spectral emission (cf.
Further details of the employed MOVPE system are outlined in Sect. 1. 1 Quantum Dot Growth QD growth optimization for laser applications aims at a maximized optical gain for every individual QD layer. Additionally, stacking optimization is required to generate uniform QD properties across all active layers. In contrast to QW growth, QD epitaxy needs to deal with a non-uniform lateral strain distribution due to the three-dimensional character of the QDs. In particular, the overgrowth of QD layers requires extensive optimization to achieve a perfectly flat surface for all subsequent layers.
Design and Realization of Novel GaAs Based Laser Concepts by Tim David Germann