Read e-book online Analog VLSI: Circuits and Principles PDF

By Shih-Chii Liu, Jorg Kramer, Giacomo Indiveri, Tobias Delbruck, Rodney Douglas

ISBN-10: 0262122553

ISBN-13: 9780262122559

Neuromorphic engineers paintings to enhance the functionality of synthetic structures in the course of the improvement of chips and structures that technique details jointly utilizing basically analog circuits. This publication provides the imperative strategies required for the artistic and profitable layout of analog VLSI circuits. The dialogue is weighted towards novel circuits that emulate usual sign processing. in contrast to such a lot circuits in advertisement or business purposes, those circuits function quite often within the subthreshold or susceptible inversion area. additionally, their performance isn't constrained to linear operations, but additionally encompasses many attention-grabbing nonlinear operations just like these happening in common platforms. themes comprise gadget physics, linear and nonlinear circuit types, translinear circuits, photodetectors, floating-gate units, noise research, and procedure expertise.

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Additional resources for Analog VLSI: Circuits and Principles

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7 . 14, 2. 7. 16, 2. 7. 22,and 2. 7 . 26", can be expressed as Ci '" £ 1 !!... (2. 7. 30) Ci + Cd Cd Ci = = = - , I which is the incremental capacitive divider ratio as seen from the conductor side. The coupling factor '" appears as a parameter in the basic equations describing the operation of MOSFETs, where it will be called the subthreshold slope factor, and will be used extensively in this book. In the small-signal analysis of MOSFET circuits ", is assumed to be constant, but it must be kept in mind that '" varies quite strongly with applied voltage, as can be seen from Fig.

More mobile charge carriers would then move to this position than away from it, and so the energy states would be filled up until the probabilities would be matched everywhere. JP. 21) at . where Gn and Gp denote the electron and hole generation rate and R n and 24 Chapter 2 Rp the electron and hole recombination rate, respectively. Generation and recombination effects account for the creation and annihilation of electron­ hole pairs due to transitions between valence band and conduction band. Generation requires a certain amount of energy that can be supplied by thermal effects, optical excitation (discussed in Chapter 10) or impact ionization in high electric fields.

6. 5from the bulk to the surface we can now define an area charge Q s as the charge underneath a unit area of semiconductor surface and relate it to the surface potential using Eq. 2. 7 . 7 : Qs = -cs£s V2csUT = =f --­ LD where £s e - 1/J . / UT + 1/Js UT _ 1 + n po Ppo ( (2. 7. 9) e 1/J. / UT _ 1/Js UT _ 1 ) (2. 7. 10) is the electric field at the surface. 16 Dependence of the area charge Q. on the surface potential for p-type silicon with acceptor density 4 X 1015 cm - 3 at room temperature. Figure adapted from S.

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Analog VLSI: Circuits and Principles by Shih-Chii Liu, Jorg Kramer, Giacomo Indiveri, Tobias Delbruck, Rodney Douglas

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