By David R. Hanson;Christopher W. Fraser
Designed as a self-study advisor, the ebook describes the real-world tradeoffs encountered in development a production-quality, platform-retargetable compiler. The authors learn the implementation of lcc, a production-quality, research-oriented retargetable compiler, designed at AT&T Bell Laboratories for the ANSI c language. The authors' leading edge approach-a "literate software" that intermingles the textual content with the resource code-uses a line-by-line rationalization of the code to illustrate how lcc is equipped.
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Extra resources for A Retargetable C Compiler: Design and Implementation
7 . 14, 2. 7. 16, 2. 7. 22,and 2. 7 . 26", can be expressed as Ci '" £ 1 !!... (2. 7. 30) Ci + Cd Cd Ci = = = - , I which is the incremental capacitive divider ratio as seen from the conductor side. The coupling factor '" appears as a parameter in the basic equations describing the operation of MOSFETs, where it will be called the subthreshold slope factor, and will be used extensively in this book. In the small-signal analysis of MOSFET circuits ", is assumed to be constant, but it must be kept in mind that '" varies quite strongly with applied voltage, as can be seen from Fig.
More mobile charge carriers would then move to this position than away from it, and so the energy states would be filled up until the probabilities would be matched everywhere. JP. 21) at . where Gn and Gp denote the electron and hole generation rate and R n and 24 Chapter 2 Rp the electron and hole recombination rate, respectively. Generation and recombination effects account for the creation and annihilation of electron hole pairs due to transitions between valence band and conduction band. Generation requires a certain amount of energy that can be supplied by thermal effects, optical excitation (discussed in Chapter 10) or impact ionization in high electric fields.
6. 5from the bulk to the surface we can now define an area charge Q s as the charge underneath a unit area of semiconductor surface and relate it to the surface potential using Eq. 2. 7 . 7 : Qs = -cs£s V2csUT = =f -- LD where £s e - 1/J . / UT + 1/Js UT _ 1 + n po Ppo ( (2. 7. 9) e 1/J. / UT _ 1/Js UT _ 1 ) (2. 7. 10) is the electric field at the surface. 16 Dependence of the area charge Q. on the surface potential for p-type silicon with acceptor density 4 X 1015 cm - 3 at room temperature. Figure adapted from S.
A Retargetable C Compiler: Design and Implementation by David R. Hanson;Christopher W. Fraser